PART |
Description |
Maker |
AP01L60AT10 |
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness
|
Advanced Power Electronics Corp.
|
AP2305BGN-HF |
Advanced Power MOSFETs
|
TY Semiconductor Co., Ltd
|
AP2302GN-HF |
Advanced Power MOSFETs
|
TY Semiconductor Co., L...
|
AP2306AGEN-HF |
Advanced Power MOSFETs
|
TY Semiconductor Co., Ltd
|
AP2311GN-HF |
Advanced Power MOSFETs
|
TY Semiconductor Co., Ltd
|
IXFH26N60Q IXFT26N60Q |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFETTM Power MOSFETs Q-Class
|
IXYS[IXYS Corporation]
|
IXFR44N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFETTM Power MOSFETs ISOPLUS247
|
IXYS[IXYS Corporation]
|
UB3010 |
N-Ch 30V Fast Switching MOSFETs N-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology
|
Unitpower Technology Limited Unitpower Technology Li...
|
IXFH13N80Q IXFT13N80Q |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFETs Q Class From old datasheet system
|
IXYS[IXYS Corporation]
|
IXFR100N25 |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFETs ISOPLUS247 From old datasheet system
|
IXYS[IXYS Corporation]
|
IRF230-233 IRF231 IRF232 IRF233 MTP12N18 MTP12N20 |
N-Channel Power MOSFETs, 12A, 150-200 V 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-Channel Power MOSFETs, 12A, 150-200 V N沟道功率MOSFET,第12A50-200 V (MTP12N18 / MTP12N20) N-Channel Power MOSFETs N-Channel Power MOSFETs/ 12A/ 150-200 V N-Channel Power MOSFETs 12A 150-200 V
|
http:// Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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